Main component | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 | ||
Physical Property | Density | g/cm3 | 3.90 | 3.1 | 6 | 3.2 |
Water Absorption | % | 0 | 0.1 | 0 | 0.1 | |
Sinter Temperature | °C | 1700 | 2200 | 1500 | 1800 | |
Mechanical Property | Rockwell Hardness | HV | 1700 | 2200 | 1300 | 1400 |
Bend Strength | kgf/mm2 | 3500 | 4000 | 9000 | 7000 | |
Compression Intensity | Kgf/mm2 | 30000 | 20000 | 20000 | 23000 | |
Thermal Property | Maximum working temperature | °C | 1500 | 1600 | 1300 | 1400 |
thermal expansion coefficient 0-1000°C | /°C | 8.0*10-6 | 4.1*10-6(0-500°C) | 9.5*10-6 | 2.0*10-6(0-500°C) | |
5.2*10-6(500-1000°C) | 4.0*10-6(500-1000°C) | |||||
Thermal Shock resistance | T(°C) | 200 | 250 | 300 | 400-500 | |
Thermal Conductivity | W/m.k(25°C | 31 | 100 | 3 | 25 | |
300°C) | 16 | 100 | 3 | 25 | ||
Electrical Property | Resisting rate of Volume | ◎.cm | ||||
20°C | >1012 | 106-108 | >1010 | >1011 | ||
100°C | 1012-1013 | - | - | >1011 | ||
300°C | >1012 | - | - | >1011 | ||
Insulation Breakdown Intensity | KV/mm | 18 | semiconductor | 9 | 17.7 | |
Dielectric Constant (1 MHz) | (E) | 10 | - | 29 | 7 | |
Dielectric Dissipation | (tg o) | 0.4*10-3 | - | - | - |
Monday, April 13, 2015
Al2O3,S-Sic,ZrO2,Si3N4 Data Sheet
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