Thursday, April 23, 2015

私の最大の光栄

私の最大の光栄は一度も失敗しないことではなく、倒れるごとに起きあがることにある。

www.chuck-table.com

Seguir caminando!

Mi mayor honor no es que no fallan ni una sola vez, es un objeto de levantarse cada vez que caen.


C'est la vie!

Friday, April 17, 2015

Porous Ceramic DISC

Porous Ceramic Disc 

(of Various pore size,porosity ,dimension and shapes)








Poröse Keramikscheiben unterschiedlicher Porengröße, Porosität, Dimension, sind Formen verfügbar

Disques céramiques poreuses de différentes tailles de pores, la porosité, la dimension, les formes sont disponibles

Discos cerámicos porosos de diversos tamaños de poro, la porosidad, la dimensión, formas están disponibles

さまざまな細孔径、気孔率、次元の多孔質セラミックディスクは、形状が可能です

Tuesday, April 14, 2015

wafer carrier


Keep walking with semi conductor industry with our ceramic know how

Keep Walking with Semi Conductor Industry with our ceramic know hows

Ceramic chuck table of 4inch,5inch,6inch,8inch,9inch,12inch


























YOU WILL NEVER WALK ALONE!

CUSTOMERS & COMPETITORS,TOGETHER WE ARE MAKING THE WORLD BETTER!






Monday, April 13, 2015

Al2O3,S-Sic,ZrO2,Si3N4 Data Sheet

Main component99%Al2O3S-SiCZrO2Si3N4
Physical PropertyDensityg/cm33.903.163.2
Water Absorption%00.100.1
Sinter Temperature°C1700220015001800
Mechanical PropertyRockwell HardnessHV1700220013001400
Bend Strengthkgf/mm23500400090007000
Compression IntensityKgf/mm230000200002000023000
Thermal PropertyMaximum working temperature°C1500160013001400
thermal expansion coefficient 0-1000°C/°C8.0*10-64.1*10-6(0-500°C)9.5*10-62.0*10-6(0-500°C)
5.2*10-6(500-1000°C)4.0*10-6(500-1000°C)
Thermal Shock resistanceT(°C)200250300400-500
Thermal ConductivityW/m.k(25°C31100325
300°C)16100325
Electrical PropertyResisting rate of Volume◎.cm



20°C>1012106-108>1010>1011
100°C1012-1013-->1011
300°C>1012-->1011
Insulation Breakdown IntensityKV/mm18semiconductor917.7
Dielectric Constant (1 MHz)(E)10-297
Dielectric Dissipation(tg o)0.4*10-3---

 

Sunday, April 12, 2015

How to Attach Samples to Carrier Wafers for Plasma Etching or Deposition

The original link for this article is from 

 https://snf.stanford.edu/

How to Attach Samples to Carrier Wafers for Plasma Etching or Deposition

This folder contains procedures for attaching samples to carrier wafers in tools that require full wafer sizes. Pros and cons of each method are given. It should be noted that materials allowed in etch systems may not be allowed in depositions system. This is due to issues such as out-gassing (hazing of the deposited film) of the material or temperature of the system. Specific tool recommendations will be given.

Using Kapton Tape

Kapton tape, a commercial polyimide tape commonly found in the lab, can be used to attach pieces to a carrier wafer.

Using photoresist

Photoresist can be used to attach pieces to a carrier wafer. The commonly available resist in the lab may be used, 3612, SPR22-3 or -7. PMMA may also be used but it is described in another procedure page.

Using PMMA

This page describes two methods of using PMMA to attach samples to carrier wafers. A Wet Mounting procedure and a Heated Mounting procedure. These procedures are courtesy of labmembers Jim Kruger and Jan Petykiewicz.

Using Carbon Dots or Tape

Within is a description the the procedure using carbon dots or tape to attach small samples onto full wafers for etch or deposition in tools that require whole wafers. Included are hints and tips for greater success.

Using CrystalBond

This page describes the procedure for attaching smaller samples to larger of full wafer size carrier wafers.

Materials That are Unacceptable for Attaching Samples to Carrier Wafers

Here is a list of prohibited materials used in other labs or facilities that have been tried in SNF but rejected as not compatible with tools and processes. They are presented as informational only.

Labmembers Survey of Methods for Attaching Samples to Carrier Wafers

Labmember Ashish Pal asked the labmembers mail list for adhesive suggestions. Here are the results in summary.
Document